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All data is as of April 28, 2025.

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MIYAZAKI SEIICHI
Research Executive Vice President
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Academic Degrees Hiroshima University 
Hiroshima University Doctor of Engineering
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Comments Seiichi Miyazaki is a graduate of Hiroshima University's School of Enginieering.He specializes in semiconductor engineering.He has engaged in research on materials,processes,and device for about 40 years,and in his research on interfacial evaluation and control aimed at enhancing the functionality and reliability of MOS devices,he has accumulated achievements in the determination of energy band alignments in various MOS structures, high-sensitivity measurements of the density and energy distribution of defect states, and quantitative evaluation of interfacial dipoles. In addition, as fundamental research for the functional enhancement of MOS devices,he has promoted the self-assembled formation of Si-Ge quantum dots and their practical appliication of devices,and developed fundamental elemental technologies indeispensable for device implementation,such as technologies for high-density integration of quantum dots, dot size distribution and position control,control of electronic states by impurity doping,modulation of potential profile in quantum dots by introduction of Ge cores, controls of density of states and work-function by silicidation,potential measurement of charged and discharged dots,and more.He made pioneering demonstrations of room-temperature,multi-level memory operations in floating-gate transistors using quantum dots as charge strorage nodes,and also pioneered the developments of light-emitting and electron-demission devices utilizing high-density 3D integrated structures of Si-Ge quantum dots. Since April 2024,he has served as Executive Vice President for Research at Hiroshima University.
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